The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. N2 - We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). T1 - Low noise short wavelength infrared avalanche photodetector using sb-based strained layer superlatticeįunding: This work was partially supported by the Army Research lab under (W911NF1810402), and the authors would like to acknowledge the support and interest of Dr Tania Paskova from US Army Future Command.
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